DocumentCode
2186462
Title
A damage model for SnAgCu solder under thermal cycling
Author
Xiao, Hui ; Li, Xiaoyan ; Liu, Na ; Yan, Yongchang
Author_Institution
Sch. of Mater. Sci. & Eng., Beijing Univ. of Technol., Beijing, China
fYear
2011
fDate
8-11 Aug. 2011
Firstpage
1
Lastpage
5
Abstract
As the failure of solder joints under thermal cycling is as a result of creep-fatigue damage evolution, the failure mechanism of SnAgCu solder was studied by using the theory of continuum damage mechanics (CDM) and a new damage model was proposed here. A special bimetallic load frame with single joint-shear sample was designed to simulate actual joints in electronic packages. Thermo-mechanical cycling and thermal cycling tests were conducted to determine material parameters in the creep-fatigue interaction damage model, in which the damage variable D showed a power-dependence upon thermal cycles. The damage variable D = 1-R0/R was selected and measured every dozens of cycles during thermal cycling tests to verify the model. The results showed that the experimental damage data can be fitted reasonably well by the relationship of the damage model proposed here for SnAgCu solder. And the evolution of solder microstructure during thermal cycling was observed by using metallographic sectioning and optical microscopy analysis, which gave the microscopic explanation for creep-fatigue damage evolution law of SnAgCu solder.
Keywords
creep; electronics packaging; fatigue; solders; SnAgCu solder; bimetallic load frame; continuum damage mechanics; creep-fatigue damage evolution; creep-fatigue interaction damage model; electronic packages; metallographic sectioning; optical microscopy analysis; solder joints; solder microstructure; thermal cycling tests; thermo-mechanical cycling; Creep; Electronic packaging thermal management; Fatigue; Soldering; Strain; Stress; Thermomechanical processes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4577-1770-3
Electronic_ISBN
978-1-4577-1768-0
Type
conf
DOI
10.1109/ICEPT.2011.6066946
Filename
6066946
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