Proposal of N-channel heterostructure dynamic threshold-voltage MOSFET (HDTMOS) with P-type doped SiGe body

In this work, we have focused on boosting the performance of the N-channel DTMOS which is promising for low-power analogue/RF circuits. Since the band offset appears mainly at the valence band and there is no conduction band offset in the Si/SiGe heterostructures, it is impossible to improve the performance of N-HDTMOS by the same approach as P-HDTMOS. As an alternative approach using heterojunction band engineering, we have proposed a novel N-channel HDTMOS technology for the first time.