Simulation of quantum and scattering effects along the channel of ultra-scaled Si-based MOSFETs

Author

Wanqiang Chen ; Register, L.F. ; Banerjee, S.K.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2002

fDate

24-26 June 2002

Firstpage

109

Lastpage

110

Abstract

As the dimensions of MOSFETs scale into deep sub-0.1 /spl mu/m, a clear understanding of both the effects of scattering and quantum interference is needed. In this work, the quantum transport simulator "Schrodinger Equation Monte Carlo" (SEMC) (L.F. Register, in Quantum-Based Electronic Devices and Systems, M. Dutta and M.A. Stroscio, eds., World Scientific, Singapore, p. 251, 1998) is used to examine the effects of scattering and quantum interference along the channel. The simulation results suggest that not only does scattering, and the modeling thereof, remain critical even for 10 nm devices, but the detailed nature of the scattering - elastic, inelastic, etc. - remains important.

Keywords

MOSFET; Monte Carlo methods; Schrodinger equation; impurity scattering; nanoelectronics; quantum interference phenomena; semiconductor device models; surface scattering; 10 nm; MOSFET dimensions; Schrodinger Equation Monte Carlo quantum transport simulator; Si; elastic scattering; impurity scattering; inelastic scattering; modeling; quantum effects; quantum interference effects; scattering effects; simulation; surface roughness scattering; ultra-scaled Si-based MOSFET channel; Analytical models; Equations; Germanium silicon alloys; Interference; MOSFET circuits; Microelectronics; Optical reflection; Optical scattering; Particle scattering; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2002. 60th DRC. Conference Digest

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-7317-0

Type

conf

DOI

10.1109/DRC.2002.1029539

Filename

1029539