Preparation and characterization of bulk nanoporous Sn and SnO2

Author

Ahmad Shahar, Mohd Lutfi ; Rais, S.A.A. ; Wahid, M.H.A. ; Ahmad, M.F.

Author_Institution

Sch. of Microelectron. Eng. (SoME), Univ. Malaysia Perlis (UniMAP), Arau, Malaysia

fYear

2012

fDate

5-6 Dec. 2012

Firstpage

72

Lastpage

77

Abstract

EUV lithography has received much attention because of leading the next generation lithography for more compact, with node size as small as 40nm integrated circuit (IC) fabrication process. Additional, the EUV lithography has been extensively researched around the world for semiconductor future road map. Bulk nanoporous of Sn and SnO₂ become reliable candidate to generate EUV lithography. This paper is focused on preparation and characterization of bulk nanoporous material of Sn and SnO₂ to overcome debris problem. The sample was prepared by reaction solid-state of powder Sn without organic binder and SnO₂ with organic binder with compacting and sintering process. The samples are characterized by morphology identification (SEM) and phase identification (XRD). The result is proposed as prospect for future EUV lithography research to get solid low plasma density target.

Keywords

X-ray diffraction; nanofabrication; nanolithography; nanoporous materials; plasma density; porous semiconductors; scanning electron microscopy; semiconductor growth; sintering; tin; tin compounds; ultraviolet lithography; EUV lithography; SEM; Sn; SnO₂; XRD; integrated circuit fabrication process; morphology identification; nanoporous materials; next generation lithography; organic binder; phase identification; plasma density; powders; sintering process; size 40 nm; Bulk nanoporous; EUV lithography; Sn and SnO2;

fLanguage

English

Publisher

ieee

Conference_Titel

Research and Development (SCOReD), 2012 IEEE Student Conference on

Conference_Location

Pulau Pinang

Print_ISBN

978-1-4673-5158-4

Type

conf

DOI

10.1109/SCOReD.2012.6518614

Filename

6518614