DocumentCode
2190251
Title
New design of X-band GaAs MMIC phase shifter using improved equivalent circuit model
Author
Takasu, H. ; Watanabe, S. ; Maeda, M. ; Miyauchi, M. ; Kamihashi, S. ; Ohtomo, M.
Author_Institution
Komukai Works, Toshiba Corp., Kawasaki, Japan
fYear
1994
fDate
23-27 May 1994
Firstpage
1413
Abstract
An improved yet simple equivalent circuit of a GaAs FET switch is proposed that takes parasitic distributed-line effects of the FET into account. X-band five-bit GaAs MMIC phase shifters designed using the model show a good agreement between the design and the measurement.<>
Keywords
III-V semiconductors; MMIC; S-parameters; equivalent circuits; field effect transistors; gallium arsenide; phase shifters; semiconductor device models; semiconductor switches; solid-state microwave devices; GaAs; GaAs FET switch; MMIC phase shifter; X-band; equivalent circuit model; parasitic distributed-line effects; Equivalent circuits; FETs; Gallium arsenide; MMICs; Phase measurement; Phase shifters; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335146
Filename
335146
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