DocumentCode
2191135
Title
Design and performance of fast high-voltage EPI-diodes
Author
Cooper, R. ; Jaggers, K.
Author_Institution
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
fYear
1983
fDate
6-9 June 1983
Firstpage
150
Lastpage
153
Abstract
The design and performance of power rectifiers based on epitaxial silicon are discussed. It is shown that, by using epitaxial material, diodes can be designed showing reverse recovery times of less than 100 ns with reverse blocking to 1000 volt without increase of forward conduction losses.
Keywords
Current measurement; Gold; Junctions; Rectifiers; Substrates; Switches; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1983 IEEE
Conference_Location
Albuquerque, New Mexico, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1983.7069852
Filename
7069852
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