Development of TiSiN diffusion barriers for Cu/SiLK metallization schemes

Author

Sankaran, S. ; Harris, W. ; Nuesca, G. ; Shaffer, E.O. ; Hiartin, S.J. ; Geer, R.E.

Author_Institution

Center for Adv. Thin Film Technol., State Univ. of New York, Albany, NY, USA

fYear

2000

fDate

2000

Firstpage

40

Lastpage

42

Abstract

Diffusion barrier optimization and compatibility studies were undertaken with respect to the integration of Cu/TiSiN stacks on SiLK low-k dielectric films. First-pass testing optimized TiSiN film composition and evaluated process compatibility with SiLK. TiSiN/SiO₂ stacks were used for baseline comparisons. Second-pass testing evaluated thermal stability of TiSiN/Cu/TiSiN/SiLK stacks against Cu diffusion and the stability of the TiSiN/SiLK interface. At temperatures up to 450°C no variations in stack composition or interfacial morphology were evidenced

Keywords

copper; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; silicon compounds; titanium compounds; Cu-Si; Cu/SiLK metallization schemes; TiSiN; TiSiN diffusion barriers; compatibility; diffusion barrier optimization; interfacial morphology; stack composition; thermal stability; Argon; Chemical technology; Circuit stability; Copper; Dielectric materials; Metallization; Morphology; Temperature; Testing; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854275

Filename

854275