• DocumentCode
    2192066
  • Title

    Physical modeling of rinsing and cleaning of submicron trenches

  • Author

    Lin, Hong ; Busnaina, Ahmed A. ; Suni, Ian I.

  • Author_Institution
    Microcontamination Res. Lab., Clarkson Univ., Potsdam, NY, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    49
  • Lastpage
    51
  • Abstract
    Cleaning of surfaces and submicron deep trenches is a tremendous challenge in semiconductor manufacturing. In this work, the rinsing of blanket and patterned wafers using pulsating flow are studied using physical numerical modeling. Preliminary results on blanket wafers cleaning process show good agreement with numerical and experimental results of literatures. Preliminary results for blanket and patterned wafers show that oscillating flow rinse is more efficient than steady flow rinse, and the optimum frequency of the oscillating flow is a function of the size of the trench
  • Keywords
    semiconductor process modelling; surface cleaning; blanket wafers; cleaning; oscillating flow rinse; pulsating flow; rinsing; semiconductor manufacturing; submicron trenches; Boundary conditions; Chemicals; Computational fluid dynamics; Equations; Frequency; Geometry; Semiconductor device modeling; Surface cleaning; Surface contamination; Transducers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    0-7803-6327-2
  • Type

    conf

  • DOI
    10.1109/IITC.2000.854278
  • Filename
    854278