Effect of fluorinated plasma on SiLK during mineral hard masks etching

Author

Maisonobe, JC ; Ermolieff, A. ; Holliger, P. ; Laugier, F. ; Passemard, G.

Author_Institution

Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France

fYear

2000

fDate

2000

Firstpage

58

Lastpage

60

Abstract

This paper concerns the integration of low-k dielectric SiLK as interconnect insulator with copper metallization. It describes more particularly the impact of hard mask etching on SiLK. It was verified that fluorine based plasma transforms surface of SiLK into fluorinated polymer with interesting properties: organic solvent solutions do not penetrate this layer. However, during the etching step, it was observed that fluorine could physically diffuse into the SiLK volume. This fluorine can be easily removed using a basic aqueous solution

Keywords

insulating thin films; integrated circuit interconnections; integrated circuit metallisation; permittivity; silicon compounds; sputter etching; Cu metallization; SiLK; basic aqueous solution; fluorinated plasma; interconnect insulator; low-k dielectric; mineral hard masks etching; organic solvent solutions; Chemicals; Copper; Etching; Metallization; Minerals; Plasma applications; Plasma chemistry; Polymers; Solvents; Surface contamination;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854281

Filename

854281