One watt Q-Band class A pseudomorphic HEMT MMIC amplifier

Author

Chen, T.H. ; Chow, P.D. ; Tan, K.L. ; Lester, J.A. ; Zell, G. ; Huang, M.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

805

Abstract

A broadband monolithic power amplifier has been developed using 0.15 /spl mu/m T-gate pseudomorphic InGaAs HEMT. When biased for class A operation, the amplifier has a measured small signal gain of 12.4 to 13.1 dB in the frequency range of 40 to 46 GHz. Saturated output power of 1.01 watts with 7.03 dB associated gain and 15.1% power-added efficiency at 44.5 GHz has also been measured.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; power amplifiers; 0.15 mum; 1.01 W; 12.4 to 13.1 dB; 15.1 percent; 40 to 46 GHz; 44.5 GHz; 7.03 dB; InGaAs; Q-Band class A pseudomorphic HEMT MMIC amplifier; T-gate pseudomorphic InGaAs HEMT; associated gain; broadband monolithic power amplifier; class A operation; frequency range; measured small signal gain; power-added efficiency; saturated output power; Broadband amplifiers; Frequency measurement; Gain measurement; HEMTs; Indium gallium arsenide; MMICs; Operational amplifiers; PHEMTs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335234

Filename

335234