DocumentCode
2192658
Title
Experimental verification of large current capability of lateral IEGTs on SOI
Author
Yasuhara, Norio ; Funaki, Hideyuki ; Matsudai, Tomoko ; Nakagawa, Akio
Author_Institution
Mater. & Devices Res. Lab., Toshiba Corp., Kawasaki, Japan
fYear
1996
fDate
20-23 May 1996
Firstpage
97
Lastpage
100
Abstract
This paper reports, for the first time, the experimentally obtained electrical characteristics of lateral injection enhanced insulated gate bipolar transistors (LIEGTs) on SOI. It is shown that optimized LIEGTs have twice as large a current capability as LIGBTs and attain the same turn-off characteristics. These results show that LIEGTs are attractive for the output devices of high voltage power ICs
Keywords
insulated gate bipolar transistors; silicon-on-insulator; SOI; current capability; electrical characteristics; high voltage power IC; lateral IEGT; lateral injection enhanced insulated gate bipolar transistor; turn-off characteristics; Conductivity; Dielectrics; Electric variables; Insulated gate bipolar transistors; Isolation technology; Laboratories; Numerical simulation; Power integrated circuits; Silicon compounds; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location
Maui, HI
ISSN
1063-6854
Print_ISBN
0-7803-3106-0
Type
conf
DOI
10.1109/ISPSD.1996.509457
Filename
509457
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