Equivalent constriction resistance measured with the low dc voltage method under the influence of fritting phenomena

The purpose of this paper is to show that the equivalent constriction resistance (R_c) was discriminated from the equivalent film resistance (R_f) for Ag-Ag and Cu-Cu contacts by measuring with the proposed low-dc-voltages (LDcV) method before and after frittings (A-fritting and B-fritting) at the contacts. The R_c data made it possible to estimate the essential dimensions of contact area i.e. its a-spot radius and film resistivity. It was detected with this method that not only the R_c but also the R_f were decreased with the B-frittings. The independent measurements for contact resistances with the B-frittings also proved that a thin film existed in a part of effective conducting area. The stability in the contact resistance was improved with a weak fritting, that is effective in making fewer errors for R_c measurement.