Mode-transition optimized 4.5 kV IGTT (IGBT mode turn-off thyristor)

Author

Yamaguchi, Masakazu ; Ogura, Tsuneo ; Ninomiya, Hiroshi ; Ohashi, Hiromichi

Author_Institution

Mater. & Devices Res. Labs., Toshiba Ceramics Co. Ltd., Kariya, Japan

fYear

1996

fDate

20-23 May 1996

Firstpage

257

Lastpage

260

Abstract

A 4.5 kV IGBT mode turn-off thyristor (IGTT) with optimized mode-transition for realizing a low power loss, that is, a low forward voltage drop (V_f) and a low turn-off loss (E_off) is described for the first time. The device concept of optimizing the vertical carrier distribution was demonstrated by the IGBT mode turn-off operation combined with the proton(H⁺)-irradiation technique. The E_off value of 18 mJ/cm² was attained with V _f of 2.1 V at an anode current density of 25 A/cm². This value of E_off is 30 to 35% smaller than that for conventional MOS-gated thyristors. As a result, the trade-off relation between V_f and E_off is greatly improved for 4.5 kV devices

Keywords

losses; power semiconductor switches; proton effects; thyristors; 2.1 V; 4.5 kV; IGBT mode turn-off thyristor; IGTT; anode current density; forward voltage drop; optimized mode-transition; power loss; proton-irradiation technique; trade-off relation; turn-off loss; vertical carrier distribution; Anodes; Cathodes; Charge carrier density; Charge carrier processes; Insulated gate bipolar transistors; Low voltage; MOSFETs; Propagation losses; Thyristors; Traction motors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509494

Filename

509494