• DocumentCode
    2193681
  • Title

    A new structural concept to suppress parasitic lateral carrier injection in insulated-gate thyristors

  • Author

    Ajit, J.S.

  • Author_Institution
    Int. Rectifier Corp., El Segundo, CA, USA
  • fYear
    1996
  • fDate
    20-23 May 1996
  • Firstpage
    279
  • Lastpage
    282
  • Abstract
    A new Insulated-Gate Thyristor structure with the N- base and P base regions of the thyristor coupled by a n-channel MOSFET is described. This configuration eliminates the parasitic lateral bipolar transistor present in previously reported MOS gated thyristor structures. This configuration leads to low on-state drop close to that of a 1-D thyristor and high controllable current density
  • Keywords
    MOS-controlled thyristors; current density; MOS gated thyristor; N- base; P base regions; controllable current density; insulated-gate thyristors; n-channel MOSFET coupling; on-state drop; parasitic lateral carrier injection; structural concept; Anodes; Bipolar transistors; Coupling circuits; Current density; Electrons; Equivalent circuits; Insulation; MOSFET circuits; Rectifiers; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
  • Conference_Location
    Maui, HI
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-3106-0
  • Type

    conf

  • DOI
    10.1109/ISPSD.1996.509499
  • Filename
    509499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2193681