A novel low-profile power module aimed at high-frequency applications

Author

Shinohara, S. ; Suzuki, T. ; Tanino, K. ; Kobayashi, H. ; Hasegawa, Y.

Author_Institution

Res. & Dev. Div., Origin Electr. Co. Ltd., Tokyo, Japan

fYear

1996

fDate

20-23 May 1996

Firstpage

321

Lastpage

324

Abstract

A new 8 mm-profile power module for high-frequency applications is described. This module exhibits low inductances of less than 4 nH for the terminals and a low thermal resistance of 0.234°W/cm², providing less assembly time by using a unique double-layered and terminal-integrated AlN substrate. Paralleled MOSFETs in this module demonstrate 500 V-50 A switching at 10 MHz

Keywords

aluminium compounds; field effect transistor switches; modules; power MOSFET; power field effect transistors; power semiconductor switches; power supplies to apparatus; semiconductor device packaging; substrates; thermal resistance; 10 MHz; 50 A; 500 V; 8 mm; AlN; assembly time; double-layered AlN substrate; high-frequency applications; inductances; low thermal resistance; low-profile power module; paralleled MOSFET; switching; terminal-integrated AlN substrate; Assembly; Copper; Heat sinks; Inductance; MOSFET circuits; Multichip modules; Power MOSFET; Thermal conductivity; Thermal resistance; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509507

Filename

509507