Precision pulsed I-V system for accurate GaAs device I-V plane characterization

Author

Pritchett, S. ; Stewart, R. ; Mason, J. ; Brehm, G. ; Christie, D.

Author_Institution

Texas Instrum. Inc., USA

fYear

1994

fDate

23-27 May 1994

Firstpage

1353

Abstract

A precision on-wafer VXI-based pulsed I-V measurement system capable of rapid device characterization is presented. This system was developed for I-V plane characterization of GaAs FETs, HBTs, and diodes up to 100 volts. The pulsed I-V system is capable of pulsewidths under 200 nanoseconds with absolute current and voltage uncertainties less than 2.5 percent over greater than 110 dB of dynamic range. Measurement throughput is under 250 ms per I-V point. Accuracies are achieved by applying "DC voltage substitution" calibration to a novel pulser/sense instrument configuration.<>

Keywords

III-V semiconductors; automatic test equipment; automatic testing; calibration; data acquisition; electric current measurement; field effect transistors; gallium arsenide; heterojunction bipolar transistors; semiconductor device testing; semiconductor diodes; voltage measurement; 100 V; 200 ns; DC voltage substitution calibration; FETs; GaAs device I-V plane characterization; HBTs; device characterization; diodes; onwafer VXI-based measurement system; pulsed I-V system; Calibration; Diodes; Dynamic range; FETs; Gallium arsenide; Instruments; Pulse measurements; Throughput; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335299

Filename

335299