Design of W-band monolithic low noise amplifiers using accurate HEMT modeling

Author

Kashiwa, T. ; Tanino, N. ; Minami, H. ; Katoh, T. ; Yoshida, N. ; Itoh, Y. ; Mitsui, Y. ; Imatani, T. ; Mitsui, S.

Author_Institution

Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1994

fDate

23-27 May 1994

Firstpage

289

Abstract

A W-band monolithic two-stage low noise amplifiers have been developed using new accurate HEMT modeling. The modeling includes intrinsic FET noise parameters that are independent of frequency. A noise figure of 5.5 dB with an associated gain of 8.7 dB is achieved at 91 GHz when biased for low noise figure, and a small signal gain of 10.4 dB with noise figure of 5.9 dB is obtained when biased for high gain. Good agreement between measured and simulated data of the low noise amplifier verifies the HEMT modeling.<>

Keywords

MMIC; equivalent circuits; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; semiconductor device models; semiconductor device noise; 5.5 to 5.9 dB; 8.7 to 10.4 dB; 91 GHz; EHF; HEMT modeling; MIMIC; MM-wave IC; W-band; intrinsic FET noise parameters; low noise amplifiers; monolithic LNA; two-stage amplifier; FETs; Frequency; Gain; HEMTs; Low-noise amplifiers; Noise figure; Noise measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335314

Filename

335314