Highly reliable InAlAs/InGaAs heterojunction FETs fabricated using completely molybdenum-based electrode technology (COMET)

Author

Onda, K. ; Fujihara, A. ; Mizuki, E. ; Hori, Y. ; Miyamoto, H. ; Samoto, N. ; Kuzuhara, M.

Author_Institution

Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan

fYear

1994

fDate

23-27 May 1994

Firstpage

261

Abstract

This paper describes high performance and high reliability InAlAs/InGaAs heterojunction FETs fabricated using completely molybdenum-based electrode technology "COMET", in which a Mo/Ti/Pt/Au Schottky gate and Mo/Ti/Pt/Au non-alloyed ohmic electrodes are successfully employed. The superior reliability of the COMET-FETs is attributed to the reduction of the interdiffusion between metals (gate or ohmic) and semiconductors (InAlAs or InGaAs) by Mo insertion.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; indium compounds; molybdenum; ohmic contacts; reliability; solid-state microwave devices; COMET; InAlAs-InGaAs-Mo-Ti-Pt-Au; Mo-Ti-Pt-Au-InAlAs-InGaAs; Schottky gate; completely molybdenum-based electrode technology; heterojunction FETs; nonalloyed ohmic electrodes; reliability; Electrodes; FETs; Gold; Heterojunctions; Indium compounds; Indium gallium arsenide; Semiconductor device reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335322

Filename

335322