DocumentCode
2195003
Title
Sensitivity analysis of 50-GHz MMIC-LNA on gate-recess depth with InAlAs/InGaAs/InP HEMTs
Author
Umeda, Y. ; Enoki, T. ; Ishii, Y.
Author_Institution
NTT LSI Labs., Kanagawa, Japan
fYear
1994
fDate
23-27 May 1994
Firstpage
123
Abstract
This paper proposes a new systematic approach to the noise-figure (NF) sensitivity analysis of MMIC low-noise amplifiers (LNA) regarding device-structure parameters such as gate-recess variation . A full-monolithic uniplanar two-stage LNA with an extremely low NF of 2.8 dB at 50 GHz is fabricated and analyzed using this new method. A comparative study reveals that the gate recess variation in the fabricated HEMTs causes no substantial NF variation in the MMIC-LNAs.<>
Keywords
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; sensitivity analysis; 2.8 dB; 50 GHz; HEMTs; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP; MMIC-LNA; NF variation; device-structure parameters; gate-recess depth; noise-figure sensitivity analysis; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Noise measurement; Sensitivity analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335350
Filename
335350
Link To Document