DocumentCode
2195803
Title
Fully differential dual-band image reject receiver in SiGe BiCMOS
Author
Imbornone, J. ; Mourant, J.-M. ; Tewksbury, T.
Author_Institution
IBM Corp., Lowell, MA, USA
fYear
2000
fDate
10-13 June 2000
Firstpage
147
Lastpage
150
Abstract
A fully differential, dual-band, image reject receiver chip is described. SiGe BiCMOS (ft=45 GHz) enables high dynamic range with NF=2.8/4.1 dB (900 MHz/1.8 GHz) including requisite balun loss, IIP3 >-17 dBm, Gp=22 dB, and image rejection >40 dB at 2.7V (87mW).
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; baluns; integrated circuit noise; radio receivers; semiconductor materials; 1.8 GHz; 2.7 V; 2.8 dB; 4.1 dB; 45 GHz; 87 mW; 900 MHz; BiCMOS; IIP3; SiGe; dynamic range; fully differential dual-band image reject receiver; image rejection; requisite balun loss; BiCMOS integrated circuits; Distributed control; Dual band; Electronics packaging; Filters; Germanium silicon alloys; Impedance matching; Noise figure; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location
Boston, MA, USA
ISSN
1529-2517
Print_ISBN
0-7803-6280-2
Type
conf
DOI
10.1109/RFIC.2000.854436
Filename
854436
Link To Document