Nanostructuring and thermoelectric properties of semiconductor tellurides

Author

Zhu, T.J. ; Cao, Y.Q. ; Yan, F. ; Zhao, X.B.

Author_Institution

Dept. of Mater. Sci. & Eng., Zhejiang Univ., Hangzhou

fYear

2007

fDate

3-7 June 2007

Firstpage

8

Lastpage

11

Abstract

Bulk nanostructured (Bi,Sb)₂Te₃ compounds and GeTe based amorphous/nanocrystal composites have been successfully fabricated by the combined hydrothermal/hot-pressing and quenching/annealing methods, respectively. The (Bi,Sb)₂Te₃ nanopowders synthesized by hydrothermal method exhibit a hollow-like structure. After hot-pressing, the nanoscale grains varying from tens to hundreds of nanometers were found in the bulk sample. The maximum ZT value of this (Bi,Sb)₂Te₃ sample is higher than the zone-melt one at room temperature. The sizes of the nanocrystals in the bulk GeTe nanocomposites were below 10 nm, the presence of which contributed to the remarkable improvement of the electrical conductivity and thermoelectric power factor compared to the amorphous precursors.

Keywords

annealing; antimony compounds; bismuth compounds; electrical conductivity; germanium compounds; hot pressing; nanocomposites; nanoparticles; nanotechnology; quenching (thermal); semiconductor growth; semiconductor materials; thermoelectric power; (BiSb)₂Te₃; GeTe; amorphous composites; annealing; electrical conductivity; hollow-like structure; hot pressing; nanocrystal composites; nanopowders; nanostructured compounds; quenching; room temperature; thermoelectric power factor; Amorphous materials; Annealing; Conductivity; Nanocomposites; Nanocrystals; Nanoparticles; Reactive power; Tellurium; Temperature; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2007. ICT 2007. 26th International Conference on

Conference_Location

Jeju Island

ISSN

1094-2734

Print_ISBN

978-1-4244-2262-3

Electronic_ISBN

1094-2734

Type

conf

DOI

10.1109/ICT.2007.4569410

Filename

4569410