• DocumentCode
    2196549
  • Title

    Surface texture of Bi2Te3-based materials deformed under pressure-current heating

  • Author

    Orihashi, Masaki ; Noda, Yasutoshi ; Hasezaki, Kazuhiro

  • Author_Institution
    Sony EMCS Corp., Tokyo
  • fYear
    2007
  • fDate
    3-7 June 2007
  • Firstpage
    86
  • Lastpage
    89
  • Abstract
    Deformation of Bi2Te3-based materials was performed. The source disks with nominal compositions of (Bi0.25Sb0.75)2Te3, (Bi0.25Sb0.75)2(Te0.95Se0.05)3 and (Bi0.90Sb0.10)2(Te0.95Se0.05)3 were cut from the ingots grown by the vertical Bridgman method (VBM). The disks were deformed by either cold press (CP) or pressure current heating (PCH). The crystal structures of the deformed materials were identified to be hexagonal by X-ray diffraction. By using the diffraction intensities, the degree of the preferred orientation was estimated, where the texture of the (00middot l ) plane was detected in the thin surface layer regions of the (PCH) materials. The thermal stress acting to the Bi2Te3-based material was estimated by using physical properties at the heterogeneous contact between the graphite and the Bi2Te3-based material at PCH temperature. The extension stress was found to be large enough to deform the Bi2Te3-based material at the contact surface. Therefore, it can be concluded that the origin of the surface texture is attributed to the thermal stress at the heterogeneous contact. The resistivity measured parallel to the pressing axis was 1/6 less than that measured perpendicular to the axis. However the anisotropies in Seebeck coefficient and carrier concentration were not so clearly detected in these two directions. The power factors of the PCH deformed materials were comparable to those of the original as-grown ingot.
  • Keywords
    Seebeck effect; X-ray diffraction; bismuth alloys; carrier density; crystal growth from melt; crystal structure; deformation; electrical contacts; electrical resistivity; graphite; heat treatment; ingots; pressing; surface texture; tellurium alloys; thermal stresses; (Bi0.25Sb0.75)2(Te0.95Se0.05)3; (Bi0.25Sb0.75)2Te3; (Bi0.90Sb0.10)2(Te0.95Se0.05)3; Seebeck coefficient; X-ray diffraction; carrier concentration; cold press; deformation; extension stress; graphite; heterogeneous contact surface; hexagonal crystal structures; ingot growth; preferred orientation; pressure-current heating; resistivity; surface texture; thermal stress; thin surface layer; vertical Bridgman method; Bismuth; Conductivity; Crystalline materials; Heating; Pressing; Surface texture; Tellurium; Temperature; Thermal stresses; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2007. ICT 2007. 26th International Conference on
  • Conference_Location
    Jeju Island
  • ISSN
    1094-2734
  • Print_ISBN
    978-1-4244-2262-3
  • Electronic_ISBN
    1094-2734
  • Type

    conf

  • DOI
    10.1109/ICT.2007.4569430
  • Filename
    4569430