DocumentCode
2196645
Title
A GaAs MCM power amplifier of 3.6 V operation with high efficiency of 49% for 0.9 GHz digital cellular phone systems
Author
Tateoka, K. ; Sugimura, A. ; Furukawa, H. ; Yuri, M. ; Yoshikawa, N. ; Kanazawa, K.
Author_Institution
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fYear
1994
fDate
23-27 May 1994
Firstpage
569
Abstract
Extremely small GaAs PA has been implemented using the AlN multilayer MCM for 0.9 GHz digital cellular phones. The present PA exhibited the efficiency of 49% with drain supply voltage as low as 3.6 V. The PA was designed to provide the matching circuits with the maximum gain at the input and the minimum intermodulation distortion at the output.<>
Keywords
III-V semiconductors; cellular radio; digital radio systems; gallium arsenide; intermodulation; multichip modules; power amplifiers; solid-state microwave circuits; ultra-high-frequency amplifiers; 0.9 GHz; 3.6 V; 49 percent; AlN multilayer MCM; GaAs; digital cellular phone systems; drain supply voltage; efficiency; intermodulation distortion; matching circuits; power FET; power amplifier; Cellular phones; Circuits; Gallium arsenide; High power amplifiers; Intermodulation distortion; Low voltage; Nonhomogeneous media; Operational amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335485
Filename
335485
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