Prediction of optimum large-signal microwave MESFET efficiency in multiplication and power amplification

Author

Yagoub, M.C.E. ; Chouai, S. ; Baudrand, H. ; Neto, A. Duarte Doria

Author_Institution

Lab. d´´Electron., ENSEEIHT, Toulouse, France

Volume

1

fYear

1995

fDate

24-27 Jul 1995

Firstpage

379

Abstract

A method is described which enables the optimum large-signal efficiency to be obtained for a microwave active device independently of the required nonlinear function. The technique consists of determining the volume surrounded by a surface called the “characteristic surface” including all the allowed powers at the terminal ports of the nonlinear component in order to deduce its optimum “intrinsic” powers and then its corresponding optimum efficiency. Applied to MESFETs, the design of both a frequency multiplier and a power amplifier permits one to validate this method

Keywords

Schottky gate field effect transistors; circuit optimisation; equivalent circuits; frequency multipliers; microwave power amplifiers; multiport networks; nonlinear network synthesis; characteristic surface; frequency multiplier; intrinsic powers; microwave MESFET efficiency; microwave active device; nonlinear component; nonlinear function; nonlinear microwave circuit design; optimum large-signal efficiency; power amplification; power amplifier; terminal ports; Circuit topology; Design optimization; Equations; Frequency; MESFETs; Microwave devices; Microwave theory and techniques; Power amplifiers; Power engineering and energy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2674-1

Type

conf

DOI

10.1109/SBMOMO.1995.509649

Filename

509649