Influence of Cl doping in the optical and electrical properties of ZnSe grown by molecular beam epitaxy

Author

de Melo, O. ; Hernández, L. ; Meléndez-Lira, M. ; Rivera-Alvarez, Z. ; Hernandez-Calderon, I.

Author_Institution

Dept. de Fisica, Centro de Investigacion y de Estudios Avanzados, IPN, Mexico City, Mexico

Volume

1

fYear

1995

fDate

24-27 Jul 1995

Firstpage

455

Abstract

Using ZnCl₂ as a doping source, we have grown epitaxial layers of Cl-doped ZnSe onto GaAs substrates by molecular beam epitaxy (MBE). The maximum carrier concentration obtained was 1.2 10¹⁹ cm^-3. An increase in the deep level emission was observed in the photoluminescence (PL) spectra of highly doped samples. By deep level transient spectroscopy (DLTS) measurements four electron traps with energy levels of Ec=0.50, 0.68, 0.74 and 1.20 eV were detected

Keywords

II-VI semiconductors; III-V semiconductors; carrier density; chlorine; deep level transient spectroscopy; gallium arsenide; molecular beam epitaxial growth; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; zinc compounds; 0.5 eV; 0.68 eV; 0.74 eV; 1.20 eV; GaAs; MBE; ZnCl₂; ZnSe:Cl-GaAs; deep level emission; deep level transient spectroscopy; doping source; electrical properties; electron traps measurement; energy levels; epitaxial layers; maximum carrier concentration; molecular beam epitaxy; optical properties; photoluminescence spectra; substrates; Doping; Electron traps; Energy measurement; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Spectroscopy; Substrates; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2674-1

Type

conf

DOI

10.1109/SBMOMO.1995.509661

Filename

509661