HBT MMICs for L band mobile radiocommunications

Author

Plouchart, J.O. ; Wang, H. ; Pinatel, C. ; Riet, M. ; Berdaguer, P. ; Dubon-Chevallier, C.

Author_Institution

Centre Nat. d´Etude des Telecom, France Telecom, Paris, France

fYear

1994

fDate

23-27 May 1994

Firstpage

1187

Abstract

L band HBT MMICs, such as VCOs, mixers, frequency dividers and power transistors, which are required in the handset of a DCS1800 mobile telecommunication system, have been fabricated on the same wafer using a simple HBT process. These different modules have been tested separately using an on-wafer RF probe. All circuits operate as predicted in the DCS1800 frequency range. Furthermore, the VCO has a large bandwidth of 400 MHz, the mixer provides positive conversion gain up to 18.5 GHz, and the power transistor exhibits an output power of 1.8 W with a power added efficiency of 60% at 1.8 GHz. These performances demonstrate that all the mobile terminal RF parts can be integrated into a single chip, when using HBT technology.<>

Keywords

MMIC; bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit technology; mobile radio systems; 1.8 GHz; 1.8 W; 18.5 GHz; 400 MHz; 60 percent; DCS1800 mobile telecommunication system; HBT MMICs; L band mobile radiocommunications; VCOs; conversion gain; frequency dividers; handset; mixers; mobile terminal RF parts; on-wafer RF probe; power added efficiency; power transistors; single chip integration; Bandwidth; Circuit testing; Frequency conversion; Heterojunction bipolar transistors; MMICs; Power transistors; Probes; Radio frequency; Telephone sets; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335557

Filename

335557