A Study on the Effects of the Structure of Passive Devices on the Performance of CMOS Low-Noise Amplifiers

Author

Gusad, Maria Theresa A ; Alarcon, Louis P.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of the Philippines, Diliman

fYear

2006

fDate

14-17 Nov. 2006

Firstpage

1

Lastpage

4

Abstract

In this paper, the effects of the structure of passive devices on the performance of LNA circuits are investigated. Using a 0.25 mum CMOS process, several LNA circuits employing the common-source topology with cascode configuration are designed, implemented, fabricated, and tested. The gain, isolation, and matching characteristics of LNA circuits implemented using different inductor and capacitor structures are characterized. Actual measurement results are compared and analyzed. From these results, recommendations on the suitable capacitor and inductor structures for LNA circuits are given

Keywords

CMOS integrated circuits; capacitors; inductors; integrated circuit design; integrated circuit testing; low noise amplifiers; 0.25 micron; CMOS low-noise amplifier; LNA circuit; capacitor structure; cascode configuration; common-source topology; inductor structure; passive device; Capacitance; Capacitors; Circuits; Inductors; Low-noise amplifiers; MOSFETs; Radio frequency; Radiofrequency amplifiers; Spirals; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2006. 2006 IEEE Region 10 Conference

Conference_Location

Hong Kong

Print_ISBN

1-4244-0548-3

Electronic_ISBN

1-4244-0549-1

Type

conf

DOI

10.1109/TENCON.2006.343886

Filename

4142151