Wafer bonding technique based GaN/Quantum Dots/GaN system

Author

Li, Ying ; Stokes, Edward

Author_Institution

Opt. Sci. & Eng. Program, Univ. of North Carolina at Charlotte, Charlotte, NC, USA

fYear

2010

fDate

18-21 March 2010

Firstpage

218

Lastpage

221

Abstract

Integration of colloidal semiconductor quantum dots with epitaxial semiconductor materials offers the possibility of a wide variety of new device structures. In this work, wafer bonding processes for layered GaN/Quantum Dots/GaN structures are described. Bonding is achieved by thermal reorganization of bidentate ligand thiophenethiol which initially caps the CdSe/ZnS core/shell quantum dots. Annealing temperature dependent bond strength feature is characterized. Maximum bond strength is achieved after annealing at 350Â°C. Effect of annealing on quantum dot photoluminescence is also investigated.

Keywords

II-VI semiconductors; III-V semiconductors; annealing; bonds (chemical); cadmium compounds; gallium compounds; photoluminescence; semiconductor quantum dots; wafer bonding; wide band gap semiconductors; zinc compounds; GaN-CdSe-ZnS-GaN; annealing effect; bidentate ligand thiophenethiol; colloidal semiconductor quantum dots; epitaxial semiconductor materials; quantum dot photoluminescence; temperature 350 degC; temperature dependent bond strength; thermal reorganization; wafer bonding; Gallium nitride; Quantum dots; Wafer bonding; CdSe; GaN; bond strength; quantum dot; wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE SoutheastCon 2010 (SoutheastCon), Proceedings of the

Conference_Location

Concord, NC

Print_ISBN

978-1-4244-5854-7

Type

conf

DOI

10.1109/SECON.2010.5453884

Filename

5453884