Modification of single event upset cross section of an SRAM at high frequencies

Author

Buchner, S. ; Campbell, A.B. ; McMorrow, D. ; Melinger, J. ; Masti, M. ; Chen, Y.J.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1995

fDate

18-22 Sep 1995

Firstpage

326

Lastpage

332

Abstract

Single event upset cross sections exhibit a clock frequency dependence, the origins of which have been investigated in a CMOS SRAM, both with a pulsed laser synchronized to the operation of the circuit and with a circuit simulator modeling program

Keywords

CMOS memory circuits; SRAM chips; circuit analysis computing; integrated circuit measurement; integrated circuit modelling; ion beam effects; timing; CMOS memory chip; SRAM; circuit simulator modeling program; clock frequency dependence; high frequencies; single event upset cross section; synchronised pulsed laser; Circuit simulation; Clocks; Discrete event simulation; Frequency dependence; Frequency synchronization; Laser modes; Optical pulses; Pulse circuits; Random access memory; Single event upset;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Conference_Location

Arcachon

Print_ISBN

0-7803-3093-5

Type

conf

DOI

10.1109/RADECS.1995.509798

Filename

509798

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2200741