DocumentCode
2201081
Title
Radiation effects of 7.5-114 MeV protons incident on SiC LEDs
Author
Houdayer, A.J. ; Hinrichsen, P.F. ; Barry, A.L.
Author_Institution
Dept. de Phys., Montreal Univ., Que., Canada
fYear
1995
fDate
18-22 Sep 1995
Firstpage
409
Lastpage
411
Abstract
The effect of proton irradiation on minority carrier lifetime in SiC light-emitting diodes has been measured for proton energies from 7.5 to 114 MeV. Small-fluence lifetime degradation as a function of proton energy and an observed non-linearity of the change in reciprocal lifetime with fluence are reported. Such data will be used for the interpretation of NIEL (Non-Ionizing Energy Loss) measurements in space, using SiC and GaAs LEDs which have been installed on the MIR space station
Keywords
carrier lifetime; energy loss of particles; light emitting diodes; minority carriers; proton effects; semiconductor materials; silicon compounds; 7.5 to 114 MeV; MIR space station; SiC; SiC light-emitting diode; minority carrier lifetime; nonionizing energy loss; proton irradiation; Charge carrier lifetime; Degradation; Energy loss; Energy measurement; Light emitting diodes; Loss measurement; Protons; Radiation effects; Silicon carbide; Space stations;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509811
Filename
509811
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