DocumentCode
2201704
Title
Half frequency instability on a 1W bipolar part
Author
Aimdilokwong, Atiwat ; Weber, Robert J.
Author_Institution
Iowa State Univ., Ames, IA, USA
fYear
2002
fDate
2002
Firstpage
169
Lastpage
171
Abstract
Half frequency instability is investigated on a 1W bipolar part. The small signal scattering parameters are measured at 500 MHz while the bipolar part is operating at 1 GHz. The measurement is done over various drive levels ranging from linear to saturation regions of operation. An algorithm is used to calculate the small signal S-parameters at 500 MHz without having to present 50-ohm termination to the device but instead the optimum load at 1 GHz. This is significant because the microwave power transistor needs a suitable load termination (not a 50-ohm termination) in order to operate at that large signal level.
Keywords
S-parameters; circuit stability; microwave power transistors; power bipolar transistors; 1 GHz; 1 W; 500 MHz; S-parameters; bipolar part; drive levels; half frequency instability; linear operation; load termination; microwave power transistor; saturation regions; small signal scattering parameters; Atherosclerosis; Frequency measurement; Impedance; Load management; Power transistors; Reflection; Scattering parameters; Signal analysis; Stability criteria; Tuners;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Conference, 2002. RAWCON 2002. IEEE
Print_ISBN
0-7803-7458-4
Type
conf
DOI
10.1109/RAWCON.2002.1030144
Filename
1030144
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