DocumentCode
2203321
Title
Real-time studies of strain relaxation in InGaAs heteroepitaxy
Author
Beresford, R. ; Lynch, C. ; Hong, S.-K. ; Chason, E.
Author_Institution
Div. of Eng., Brown Univ., Providence, RI, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
41
Lastpage
42
Abstract
The relaxation behavior in InGaAs heteroepitaxy during growth interrupts reveal that at a given dislocation density, the glide velocity can be increased orders of magnitude by the presence of the growth flux. These results are interpreted in terms of adatom enhanced nucleation of single kinks at the growth surface.
Keywords
III-V semiconductors; annealing; dislocation density; gallium arsenide; indium compounds; molecular beam epitaxial growth; nucleation; semiconductor epitaxial layers; semiconductor growth; GaAs; InGaAs; InGaAs heteroepitaxy; adatom enhanced nucleation; dislocation density; glide velocity; growth flux; growth interruption; growth surface; single kinks; strain relaxation; Capacitive sensors; Indium gallium arsenide; Kinetic theory; Molecular beam epitaxial growth; Optical films; Optical sensors; Stress; Substrates; Surface emitting lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239896
Filename
1239896
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