Pt/SnO2 Nanowires/SiC Based Hydrogen Gas Sensor

Author

Shafiei, M. ; Wlodarski, W. ; Kalantar-zadeh, K. ; Comini, E. ; Bianchi, S. ; Sberveglieri, G.

Author_Institution

RMIT Univ., Melbourne

fYear

2007

fDate

28-31 Oct. 2007

Firstpage

166

Lastpage

169

Abstract

Pt/SnO₂ nanowires/SiC based metal-oxide-semiconductor (MOS) devices were fabricated and tested for their gas sensitivity towards hydrogen. Tin oxide (SnO₂) nanowires were grown on SiC substrates by the vapour liquid solid growth process. The material properties of the SnO₂ nanowires such as its formation and dimensions were analyzed using scanning electron microscopy (SEM). The current-voltage (I-V) characteristics at different hydrogen concentrations are presented. The effective change in the barrier height for 0.06 and 1% hydrogen were found to be 20.78 and 131.59 meV, respectively. A voltage shift of 310 mV at 530degC for 1% hydrogen was measured.

Keywords

MIS devices; electric properties; gas sensors; interface structure; nanowires; scanning electron microscopy; silicon compounds; tin compounds; vapour phase epitaxial growth; wide band gap semiconductors; MOS devices; Pt-SnO₂-SiC; SEM; barrier height; current-voltage characteristics; dimension properties; formation properties; gas sensitivity; hydrogen gas sensor; material properties; scanning electron microscopy; vapour liquid solid growth process; voltage shift; Gas detectors; Gases; Hydrogen; Nanoparticles; Nanostructured materials; Nanowires; Semiconductor materials; Sensor phenomena and characterization; Silicon carbide; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2007 IEEE

Conference_Location

Atlanta, GA

ISSN

1930-0395

Print_ISBN

978-1-4244-1261-7

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2007.4388362

Filename

4388362