DocumentCode
2203661
Title
Stress evolution and nitrogen incorporation in GaAsN films
Author
Reason, M. ; Ye, W. ; Weng, X. ; Obeidi, G. ; Goldman, R.S. ; Rotberg, V.
Author_Institution
Dept. of Mater. Sci. & Eng., Michigan Univ., Ann Arbor, MI, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
67
Abstract
We have investigated stress evolution in GaAsN films, using a combination of in situ and ex situ measurements. A comparison of nuclear reaction analysis and Rutherford backscattering spectrometry in channeling and nonchanneling conditions suggests significant composition dependent incorporation of N into nonsubstitutional sites.
Keywords
III-V semiconductors; Rutherford backscattering; doping profiles; elastic constants; gallium arsenide; gallium compounds; narrow band gap semiconductors; semiconductor doping; semiconductor thin films; GaAsN; GaAsN films; Rutherford backscattering spectrometry; nitrogen incorporation; nonchanneling conditions; nuclear reaction analysis; stress; Backscatter; Interpolation; Materials science and technology; Nitrogen; Nuclear electronics; Optical films; Photovoltaic cells; Semiconductor films; Spectroscopy; Stress measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239909
Filename
1239909
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