• DocumentCode
    2203802
  • Title

    Electron effective mass of Ga0.7In0.3NxAs1-x

  • Author

    Kondow, M. ; Fujisaki, S. ; Shirakata, S. ; Ikari, T. ; Kitatani, T.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    76
  • Lastpage
    77
  • Abstract
    The electron effective mass of GaInNAs is important to design excellent long-wavelength lasers on GaAs. However, it remains still unestablished. We find that it is 0.08±0.1 m0 almost independent of nitrogen content from 0.3 to 1.5%.
  • Keywords
    III-V semiconductors; effective mass; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; Ga0.7In0.3NxAs1-x; GaInNAs electron effective mass; long wavelength lasers; nitrogen content; Design engineering; Effective mass; Electrons; Energy measurement; Gallium arsenide; Nitrogen; Optical materials; Optical scattering; Particle scattering; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239914
  • Filename
    1239914
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2203802