Nanoscale characterization and mitigation of defects in nitride semiconductors

Author

Yu, E.T. ; Miller, E.J. ; Schaadt, D.M. ; Simpkins, B.S.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

81

Lastpage

82

Abstract

Epitaxially grown Group III-nitride semiconductor materials are typically characterized by high concentrations of point and extended defects. Scanning probe techniques, atomic force microscopy (AFM), conductive atomic force microscopy (c-AFM), scanning Kelvin probe force microscopy (SKPM), and scanning capacitance microscopy (SCM) to characterise the structural and electronic properties of AlGaN/GAN heterostructure field-effect transistor and n-GaN Schotty diodes.

Keywords

III-V semiconductors; Schottky diodes; aluminium compounds; atomic force microscopy; extended defects; field effect transistors; gallium compounds; point defects; semiconductor epitaxial layers; wide band gap semiconductors; AFM; AlGaN-GaN; AlGaN/GAN heterostructure field-effect transistor; GaN; GaN Schotty diodes; conductive atomic force microscopy; electronic properties; group III-nitride semiconductor; scanning Kelvin probe force microscopy; scanning capacitance microscopy; structure properties; Aluminum gallium nitride; Atomic force microscopy; Atomic layer deposition; Capacitance; Gallium nitride; HEMTs; Kelvin; Probes; Scanning electron microscopy; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239915

Filename

1239915