DocumentCode
2204004
Title
Selective growth of InAs quantum dots on patterned GaAs substrate by metal-organic chemical vapor deposition
Author
Hsieh, Tung-Po ; Pe-Chin Chiu ; Liu, Yu-Chum ; Yeh, Nien-Tze ; Ho, Wen-Jeng ; Chyi, Jen-Inn
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
97
Lastpage
98
Abstract
In this paper, we demonstrate quantum dots (QDs) on nano-scale mesa using wet chemical etching and epitaxial growth process on Si-doped GaAs substrates.
Keywords
III-V semiconductors; MOCVD; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; sputter etching; GaAs:Si; InAs; InAs quantum dots epitaxial growth; Si doped GaAs substrate; metal organic chemical vapor deposition; wet chemical etching; Buffer layers; Chemical vapor deposition; Epitaxial growth; Gallium arsenide; Laboratories; Optical buffering; Photoluminescence; Quantum dots; Substrates; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239923
Filename
1239923
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