• DocumentCode
    2204518
  • Title

    Three-color InAs/InGaAs quantum dots-in-a-well infrared photodetectors

  • Author

    Krishna, Saniav ; Raghavan, Sunil ; Von Winckel, Greg ; Stintz, Andreas ; Ariyawansa, G. ; Matsik, S.G. ; Perera, A.G.U.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    133
  • Lastpage
    134
  • Abstract
    In this article, we report a three-color (λp1∼ 4 μm, λp2∼ 8 μm and λp3∼ 25 μm) quantum dot detector. The n-i-n detector consists of 10 layers of InAs dots in an InGaAs well. The conduction band diagram along with the intersubband energy spacing obtained from photoluminescence and absorption measurements.
  • Keywords
    III-V semiconductors; conduction bands; gallium arsenide; indium compounds; infrared detectors; photodetectors; photoluminescence; semiconductor quantum dots; 25 micron; 4 micron; 8 micron; InAs-InGaAs; conduction band diagram; infrared photodetectors; intersubband energy; n-i-n detector; photoluminescence; semiconductor quantum wells; three color InAs/InGaAs quantum dots; Astronomy; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Photodetectors; Physics; Quantum dots; Space technology; Stationary state; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239942
  • Filename
    1239942
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2204518