• DocumentCode
    2204527
  • Title

    Nitride UV emitters

  • Author

    Nishida, Toshio ; Ban, Tomoyuki ; Kobayashi, Naoki

  • Author_Institution
    NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    135
  • Lastpage
    136
  • Abstract
    Nitride semiconductor can provide wide band gap energy of direct transition, which enables ultraviolet (UV) emission from 200 to 400 nm. The efficiency of LEDs is usually evaluated based on internal quantum efficiency and extraction efficiency. We fabricated an AlGaN-SQW-LED by directly growing it on AlN formed on sapphire substrate, both of which are transparent in the UV range. Sensing and certifications on mobile or remote devices would also be practical by introducing 250-350 nm UV-LEDs.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; 200 to 400 micron; Al2O3; AlGaN; AlGaN-SQW-LED; AlN formation; UV emission; extraction efficiency; internal quantum efficiency; nitride UV emitters; nitride semiconductor; remote devices; sapphire substrate; ultraviolet emission; wide band gap energy; Displays; Energy consumption; Geometry; Light emitting diodes; Light sources; Optical sensors; Phosphors; Photochemistry; Solid state lighting; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239943
  • Filename
    1239943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2204527