DocumentCode
2204688
Title
Luminescence efficiency of InGaN multiple quantum well UV-LEDs
Author
Pan, Chang-Chi ; Lee, Chia-Ming ; Hsu, Wen-Jay ; Chen, Guan-Ting ; Chyi, Jen-Inn
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
149
Lastpage
150
Abstract
In this paper, we have conduced a series of measurements to investigate the luminescence efficiency of UV-LEDs with emission wavelength of 400 nm. Injection current-dependent characteristics are analysed to clarify the dominant factors affecting the luminescence efficiency of UV-LEDs.
Keywords
III-V semiconductors; current density; electroluminescence; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; 400 nm; InGaN; InGaN multiple quantum well UV-LED; injection current-dependent properties; luminescence efficiency; Current density; Electroluminescence; Gallium nitride; Light emitting diodes; Luminescence; Power generation; Pulse measurements; Quantum well devices; Radiative recombination; Solid state lighting;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239950
Filename
1239950
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