• DocumentCode
    2204857
  • Title

    AlGaN-GaN HEMTs: material, device, circuit technology and applications

  • Author

    Parikh, P. ; Wu, Y.-F. ; Chavarkar, P. ; Moore, M. ; Mishra, U.K. ; Sheppard, S. ; Smith, A. ; Saxler, A. ; Duc, J. ; Pribble, W. ; Milligan, J. ; Palmour, J.

  • Author_Institution
    Cree Santa Barbara Technol. Center, CA, USA
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    165
  • Lastpage
    166
  • Abstract
    In this paper recent progress in material, device and circuit technology of GaN based HEMT is discussed. We have also developed GaN HEMT hybrid amplifiers as well as MMICs, including air wedge and MIMC capacitors and resistors.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN HEMT; HEMT hybrid amplifiers; MIM capacitors; MMIC; circuit technology; resistors; Aluminum gallium nitride; Broadband amplifiers; Circuits; Fabrication; Gallium nitride; HEMTs; MODFETs; Silicon carbide; Temperature; Thermal management;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239957
  • Filename
    1239957
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2204857