Plasmon Enhancements for FIR Detection

Author

Perera, A.G.U. ; Matsik, S.G. ; Jayaweera, P.V.V. ; Huang, D.H. ; Liu, H.C. ; Buchanan, M.

Author_Institution

Georgia State Univ., Atlanta

fYear

2007

fDate

28-31 Oct. 2007

Firstpage

431

Lastpage

434

Abstract

The use of plasmons to improve the response of FIR and THz detectors is generating extensive interest. Increased absorption due to the plasmonic absorption in a GaAs wafer with a thin oxide layer and a metal grid is reported. As expected, an absorption peak for E perpendicular to the grid is observed with peak wavelength varying from 12.6 to 14.3 mum as the grid period varies from 3.6 to 4.5 mum. The absorption peak wavelength obeys the equation sin thetas/lambda + n/a = alpha/lambda with an experimentally determined value of 3.1 for alpha. The plasmon absorption is -25% and incorporation of plasmon effects into FIR detectors could lead to enhanced response.

Keywords

gallium arsenide; infrared detectors; submillimetre wave detectors; surface plasmons; FIR detection; GaAs; metal grid; plasmon enhancement; plasmonic absorption; terahertz detector; thin oxide layer; wavelength 12.6 mum to 14.3 mum; Absorption; Detectors; Finite impulse response filter; Gratings; Nanobioscience; Optical surface waves; Photoelectricity; Physics; Plasmons; Raman scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2007 IEEE

Conference_Location

Atlanta, GA

ISSN

1930-0395

Print_ISBN

978-1-4244-1261-7

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2007.4388428

Filename

4388428