A new single gate MOS controlled thyristor with current saturation and large SOA

Author

Huang, S. ; Amaratunga, G.A.J. ; Udrea, F. ; Waind, P. ; Coulbeck, L. ; Taylor, P.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

1

fYear

2001

fDate

2001

Firstpage

162

Abstract

A novel single gate MOS controlled current saturation thyristor (MCST) device is proposed. In the on-state the MCST operates in thyristor-like mode at low anode voltage and enters the IGBT-like mode automatically with increasing anode voltage, offering a low on-state voltage drop and current saturation capability. The saturation current density of the MCST is strongly dependent on the on-set voltage or the p+ buffer/n-well junction, leading to its excellent safe operation area (SOA) and making it suitable for high power applications

Keywords

MOS-controlled thyristors; current density; semiconductor device measurement; IGBT-like mode; MCST; anode voltage; current saturation; current saturation capability; high power applications; large SOA; low anode voltage; low on-state voltage drop; n-well junction; on-set voltage; on-state; p+ buffer; safe operation area; saturation current density; single gate MOS controlled current saturation thyristor; Anodes; Cathodes; Circuits; Diodes; Doping; Insulated gate bipolar transistors; Low voltage; MOSFETs; Semiconductor optical amplifiers; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981447

Filename

981447