DocumentCode
2205081
Title
Monolithically integrated InP-based 1.55 μm photoreceivers using V-grooved RFPD/HBT integration technology
Author
Lee, B. ; Song, Y. ; Yang, K.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
187
Lastpage
188
Abstract
InP-based photoreceivers were successfully integrated with the InP V-groove and the refracting facet photodiode (RFPD), for the first time, based on the shared layer integration technology. The InP-V groove optical bench and the RFPD were simultaneously fabricated using the base-collector layers of the InP/InGaAs HBT. The alignment process of the optical fibre was greatly simplified using the fabricated InP V-grooves. The developed integration technology allowing simple and efficient optical coupling using the on-chip InP V-groove was high speed photoreceivers arrays for dense WDM application.
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; monolithic integrated circuits; optical fibres; optical receivers; photodiodes; semiconductor heterojunctions; 1.55 micron; HBT integration technology; InP based photoreceivers; InP-InGaAs; InP-InGaAs base collector layers; WDM application; monolithically integrated InP-based photoreceivers; on-chip InP; optical coupling; optical fibre; refracting facet photodiode; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical arrays; Optical coupling; Optical fibers; Optical refraction; Photodiodes; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239968
Filename
1239968
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