Methodology of parameter and coupling ratio extraction for source side injection (SSI) flash cell

Author

Sim, Sang-Pil ; Kordesch, Al ; Lee, Ben ; Guo, Ping ; Liu, Chun-Mai ; Kwyro Lee ; Yang, Cary Y.

Author_Institution

Microelectron. Lab., Santa Clara Univ., CA, USA

Volume

1

fYear

2001

fDate

2001

Firstpage

209

Abstract

We present a new methodology to generate a two-transistor MACRO model of a SSI Flash cell based on a practical cell partitioning and a systematic and rigorous parameter extraction scheme. Through judicious use of TCAD simulation and precise measurement techniques, BSIM3 parameters of the individual transistors and coupling ratios of the cell were extracted, yielding a SPICE-compatible MACRO model for a three-poly split-gate Flash cell

Keywords

SPICE; charge injection; flash memories; integrated circuit measurement; integrated circuit modelling; technology CAD (electronics); BSIM3 parameters; SPICE-compatible MACRO model; SSI Flash cell; TCAD simulation; cell partitioning; coupling ratio extraction; coupling ratios; flash cell; measurement techniques; parameter extraction; parameter extraction scheme; source side injection; three-poly split-gate Flash cell; two-transistor MACRO model; Capacitors; Circuit synthesis; Coupling circuits; Design optimization; Measurement techniques; Parameter extraction; Photography; Split gate flash memory cells; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981457

Filename

981457