p-Si Microprobe Arrays Grown at Low Temperature by Selective VLS Using In-Situ Doping and Their Properties

This paper reports the high-yield growth of p-Si microprobe arrays at low temperature by using Au-catalyzed selective vapor-liquid-solid (VLS) growth using in-situ doping VLS growth using Si₂H₆ only gives intrinsic Si microprobes, which could be doped by diffusion process (at 1100degC) after VLS growth. But in this work we have demonstrated that by incorporating in-situ doping using the gas source of Si₂H₆ and B₂H₆ with VLS growth process, doped p-Si microprobes can be realized directly at a temperature (700degC or less) lower than that required at diffusion process. The effects of boron doping on the physical and electrical properties of these p-Si microprobes have been investigated in detail.