InAs/GaInSb/AlGaAsSb based type-II W-lasers

Author

Mermelstein, C. ; Schmitz, J. ; Kiefer, R. ; Walther, M. ; Wagner, J.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

213

Lastpage

214

Abstract

In this paper, we study electrically pumped InAs/GaInSb/AlGaAsSb based type-II W-lasers were grown by solid-source on (100) GaSb:Te substrates, using valved cracker effusion cells for the supply of the group V elements. The active region, composed of typically 5 to 10 repetitions of the InAs/GaInSb/InAs W-building block separated by AlGaAsSb interperiod barriers, is surrounded by AlGaAsSb separate confinement layers forming the core of the optical waveguide with a total thickness of 1.3 μm.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; waveguide lasers; (100) GaSb:Te substrates; 1.3 micron; AlGaAsSb interperiod barriers; GaSb:Te; InAs-GaInSb-AlGaAsSb; electrically pumped InAs/GaInSb/AlGaAsSb based type-II W-lasers; group V elements; optical waveguide; valved cracker effusion cells; Composite materials; Diode lasers; Molecular beam epitaxial growth; Optical materials; Optical waveguides; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature dependence; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239981

Filename

1239981