• DocumentCode
    2205504
  • Title

    Tunnel FET: A CMOS Device for high Temperature Applications

  • Author

    Born, Mathias ; Bhuwalka, Krishna Kumar ; Schindler, Markus ; Abelein, Ulrich ; Schmidt, Matthias ; Sulima, Torsten ; Eisele, I.

  • Author_Institution
    Inst. of Phys., Univ. der Bundeswehr Munchen, Neubiberg
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    124
  • Lastpage
    127
  • Abstract
    This paper presents experimental data on the temperature dependence of silicon tunnel field effect transistors (FETs) and corresponding simulations. It shows that the characteristics of tunnel transistors depend only weakly on temperature and that the "sub-threshold" swing is temperature independent. The behavior is compared to conventional MOSFETs
  • Keywords
    CMOS integrated circuits; field effect transistors; silicon; tunnel transistors; CMOS device; MOSFET; silicon tunnel field effect transistors; temperature dependence; tunnel FET; FETs; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2006 25th International Conference on
  • Conference_Location
    Belgrade
  • Print_ISBN
    1-4244-0117-8
  • Type

    conf

  • DOI
    10.1109/ICMEL.2006.1650911
  • Filename
    1650911
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2205504