Pulsed laser annealing of zinc - implanted InP

The pulsed laser annealing technique can eliminate many induced defects from zinc-implantation InP and change amorphous into mono-crystal on the surface of InP sample. The optimal annealing condition for pulsed ruby laser is that laser power density is about 0-44J/cm² and time width is 70 ns. If the pulsed laser radiating power density is too high or too low, the surface of sample will produce poly-crystal. On the optimal annealing condition, the shallow p-n junction and the high precipitous accepter concentration distribution have been obtained. The maximum accepter concentration will exceed 10¹⁹cm^-3. The junction depth is less than 0.12 μm. The proposed macro-kinetic model can be employed to explain the phenomenon and the physical processes in pulsed laser annealing