DocumentCode
2206142
Title
Study on key technologies of copper metallization in ULSI
Author
Yang, Xia ; He, Qian ; Guo-hai, Bang ; Wang Wen-quan ; De-xin, Wu
Author_Institution
Microelectron. R&D Center, Acad. Sinica, Beijing, China
Volume
1
fYear
2001
fDate
2001
Firstpage
372
Abstract
In this paper we discuss the current damasense processes of copper metallization. The study will be focus on some key technologies such as novel barrier, copper deposition and chemical mechanical polishing (CMP) processes
Keywords
ULSI; chemical mechanical polishing; copper; electroplating; integrated circuit metallisation; Cu; Cu metallization; ULSI; chemical mechanical polishing; damasense processes; deposition; Annealing; Capacitors; Chemical technology; Copper; Metal-insulator structures; Metallization; Nitrogen; Sputtering; Thermal stresses; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981497
Filename
981497
Link To Document